Siltectra has developed its kerf-free “Cold Split” process to replace wire sawing of wafers from boules or ingots as well as back-grinding of processed semiconductor wafers, so called thinning. Compared to wire sawing, CS significantly improves economics by avoiding material waste, which translates in almost double the amount of wafers per grown SiC boule.
“Cold Split” is a proven universal kerf-free method and applies to single-crystal materials; e.g., SiC, Si, Ge, sapphire, GaAs, GaN, AlN, InP, YAG, as well as to amorphous or polycrystalline materials such as, Al2O3, bullet-proof glass, etc. “Cold Split” scales favorably with size and has been demonstrated on wafer diameters of up to 300 mm, and the process can operate at nearly 100% yield. CS cuts wafers in a range from 30-2000 µm thickness.
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